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Probability Density Functions Executables, source code, and test file results. This zip archive includes aonsole utility that includes inverse probability distribution functions so you can input confidence levels and get threshold settings. Includes Gaussian, chi-square, Student’s t, F-distribution, and more.
BinHex is a Windows utility that provides hex listings of any file, with an ASCII column on the right.
File Splitter Need to break up a file for e-mail, floppies, or multiple pass with flash hard drive, or even multiple CDROMs? This will do it, and also you get a batch file to reassemble the original file and clean up; the batch file runs under Windows, DOS, or OS/2.
Quaternions – A 2.5 MB PDF file that shows how to use quaternions to model rotation of rigid bodies, including dynamic six degrees-of-freedom modeling.
BJT v-i curves – a utility that produces v-i curves for bipolar junction transistors. Fortran 95 source code included. The program is principally a Fortran 95 module that includes a callable function that computes collector current as a function of collector voltage and base current. The model is very simple and assumes that the transistor is characterized by the beta, the Early voltage (where all the collector current lines intersect) in the constant current region, a constant low resistance in saturation, and a collector leakage current for zero base current. The transition between saturation and the constant current region is modeled as abrupt.
MOSFET v-i curves – a utility that produces v-i curves for metal oxide semiconductor field effect transistors (MOSFETs) and other insulated gate FETs (IGFETs). The program is principally a Fortran 95 module that includes callable functions that compute:
<![if !supportLists]>1. <![endif]>Drain current as a function of drain voltage and gate voltage,
<![if !supportLists]>2. <![endif]>MOSFET transconductance as a function of drain voltage and gate voltage, and
<![if !supportLists]>3. <![endif]>Drain conductance as a function of drain voltage and gate voltage.
The model is very simple, and assumes that the transistor is characterized by the threshold voltage, the conductance parameter, and the Early voltage in the constant current region.